? 2004 ixys all rights reserved 1 - 3 mcc 161 mcd 161 448 symbol conditions maximum ratings i trms t vj = t vjm 300 a i tavm t c = 85c; 180 sine 165 a i tsm t vj = 45c; t = 10 ms (50 hz) 6000 a v r = 0 t = 8.3 ms (60 hz) 6400 a t vj = t vjm ; t = 10 ms (50 hz) 5250 a v r = 0 t = 8.3 ms (60 hz) 5600 a i 2 dt t vj = 45c; t = 10 ms (50 hz) 180000 a 2 s v r = 0 t = 8.3 ms (60 hz) 170000 a 2 s t vj = t vjm ; t = 10 ms (50 hz) 137000 a 2 s v r = 0 t = 8.3 ms (60 hz) 128000 a 2 s (di/dt) cr t vj = t vjm ; repetitive, i t = 500 a 150 a/s f = 50 hz; t p = 200 s; v d = 2 / 3 v drm ; i g = 0.5 a; non repetitive, i t = i tavm 500 a/s di g /dt = 0.5 a/s (dv/dt) cr t vj = t vjm ; v dr = 2 / 3 v drm0 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm ;t p = 30 s 120 w i t = i tavm ;t p = 500 s 60 w p gav 8w v rgm 10 v t vj -40...125 c t vjm 125 c t stg -40...125 c v isol 50/60 hz, rms; t = 1 min 3000 v~ i isol < 1 ma; t = 1 s 3600 v~ m d mounting torque (m6) 2.25-2.75 nm terminal connection torque (m6) 4.5-5.5 nm weight typical including screws 125 g i trms = 2x300 a i tavm = 2x165 a v rrm = 2000-2200 v v rsm v rrm type v dsm v drm vv 2100 2000 mcc 161-20io1 mcd 161-20io1 2300 2200 mcc 161-22io1 mcd 161-22io1 data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated features international standard package d irect c opper b onded al 2 o 3 -ceramic base plate planar passivated chips isolation voltage 3600 v~ ul registered, e 72873 keyed gate/cathode twin pins applications motor control power converter heat and temperature control for industrial furnaces and chemical processes lighting control contactless switches advantages space and weight savings simple mounting improved temperature and power cycling reduced protection circuits high voltage thyristor module 1 2 3 6 7 5 4 ixys reserves the right to change limits, test conditions and dimensions mcd mcc 36 71 542 31542
? 2004 ixys all rights reserved 2 - 3 mcc 161 mcd 161 448 symbol conditions characteristic values i rrm , i drm v r = v rrm ;t vj = t vjm 40 ma v t i t = 300a; t vj = 25c 1.36 v v t0 for power-loss calculations only (t vj = t vjm ) 0.8 v r t 1.6 m ? v gt v d = 6 v; t vj = 25c 2 v t vj = -40c 2.6 v i gt v d = 6 v; t vj = 25c 150 ma t vj = -40c 200 ma v gd v d = 2 / 3 v drm ;t vj = t vjm 0.25 v i gd v d = 2 / 3 v drm ;t vj = t vjm 10 ma i l t vj = 25c; v d = 6 v; t p = 30 s 200 ma di g /dt = 0.45 a/s; i g = 0.45 a i h t vj = 25c; v d = 6 v; r gk = 150 ma t gd t vj = 25c; v d = 1/2 v drm 2s di g /dt = 0.5 a/s; i g = 0.5 a t q t vj = t vjm ; v r = 100 v; v d = 2 / 3 v drm ; t p = 200 s typ. 150 s dv/dt = 20 v/s; i t = 160 a; -di/dt = 10a/s q s t vj = t vjm 550 c i rm -di/dt = 50 a/s; i t = 300 a 235 a r thjc per thyristor; dc current 0.155 k/w per module 0.078 k/w r thjk per thyristor; dc current 0.225 k/w per module 0.113 k/w d s creeping distance on surface 12.7 mm d a creepage distance in air 9.6 mm a maximum allowable acceleration 50 m/s 2 dimensions in mm (1 mm = 0.0394") optional accessories for modules keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red type zy 180l (l = left for pin pair 4/5) ul 758, style 1385, type zy 180r (r = right for pin pair 6/7) csa class 5851, guide 460-1-1 fig. 1 gate trigger characteristics fig. 2 gate trigger delay time
? 2004 ixys all rights reserved 3 - 3 mcc 161 mcd 161 448 0 25 50 75 100 125 0.5 1.5 0.0 1.0 2.0 0 50 100 150 200 250 300 350 400 450 500 i t , i f v t , v f v s a 0.001 0.01 0.1 1 0 1000 2000 3000 4000 5000 6000 t i tsm a t vj = 25c t vj = 125c 110 10 4 10 5 10 6 i 2 t t ms a 2 s t vj = 45c t vj = 125c i favm t a p tot 0 100 200 300 400 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c w a p tot 0 50 100 150 200 250 0 40 80 120 160 200 240 280 320 360 400 0 25 50 75 100 125 w a r thka k/w 0.1 0.2 0.3 0.5 0.8 1.5 2 180 sin 120 60 30 dc i davm t a r thka k/w 0.02 0.04 0.06 0.1 0.15 0.20 0.30 t c 0 25 50 75 100 125 0 50 100 150 200 250 300 350 a i favm 180 sin 120 60 30 dc t vj = 45c t vj = 125c 80 % v rrm 50 hz t z thjc 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.0 0.1 0.2 0.3 k/w s dc 180 120 60 30 c c fig 3: forward current vs. voltage drop per thyristor/diode fig. 4: surge overload current i tsm , i fsm = f(t) fig. 5: i 2 t versus time per diode fig. 8: maximum forward current at case temperature i tav m , i davm = f (t c ,d) fig. 6: power dissipation vs. on-state current and ambient temperature (per thyristor/diode) fig. 7: power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge) fig. 9: transient thermal impedance junction to case z thjc at various conduction angles
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